JPS4942267A - - Google Patents

Info

Publication number
JPS4942267A
JPS4942267A JP48054176A JP5417673A JPS4942267A JP S4942267 A JPS4942267 A JP S4942267A JP 48054176 A JP48054176 A JP 48054176A JP 5417673 A JP5417673 A JP 5417673A JP S4942267 A JPS4942267 A JP S4942267A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48054176A
Other languages
Japanese (ja)
Other versions
JPS5346428B2 (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4942267A publication Critical patent/JPS4942267A/ja
Publication of JPS5346428B2 publication Critical patent/JPS5346428B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/38—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers
    • H03F3/387—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only
    • H03F3/393—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
JP5417673A 1972-05-17 1973-05-17 Expired JPS5346428B2 (en])

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00254058A US3806741A (en) 1972-05-17 1972-05-17 Self-biasing technique for mos substrate voltage

Publications (2)

Publication Number Publication Date
JPS4942267A true JPS4942267A (en]) 1974-04-20
JPS5346428B2 JPS5346428B2 (en]) 1978-12-13

Family

ID=22962778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5417673A Expired JPS5346428B2 (en]) 1972-05-17 1973-05-17

Country Status (8)

Country Link
US (1) US3806741A (en])
JP (1) JPS5346428B2 (en])
DE (1) DE2308819A1 (en])
FR (1) FR2184650A1 (en])
GB (1) GB1381435A (en])
IL (1) IL41518A0 (en])
IT (1) IT983294B (en])
NL (1) NL7306762A (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158851A (en) * 1978-06-06 1979-12-15 Nec Corp Field effect transistor circuit
JPS5529198A (en) * 1978-08-23 1980-03-01 Rockwell International Corp Substrate bias generator circuit
JPS5683057A (en) * 1979-12-11 1981-07-07 Nec Corp Integrated circuit

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3975649A (en) * 1974-01-16 1976-08-17 Hitachi, Ltd. Electronic circuit using field effect transistor with compensation means
US3913026A (en) * 1974-04-08 1975-10-14 Bulova Watch Co Inc Mos transistor gain block
US3922571A (en) * 1974-06-12 1975-11-25 Bell Telephone Labor Inc Semiconductor voltage transformer
GB1533231A (en) * 1974-11-07 1978-11-22 Hitachi Ltd Electronic circuits incorporating an electronic compensating circuit
US3996481A (en) * 1974-11-19 1976-12-07 International Business Machines Corporation FET load gate compensator
US4011471A (en) * 1975-11-18 1977-03-08 The United States Of America As Represented By The Secretary Of The Air Force Surface potential stabilizing circuit for charge-coupled devices radiation hardening
US4163161A (en) * 1975-11-24 1979-07-31 Addmaster Corporation MOSFET circuitry with automatic voltage control
US4030084A (en) * 1975-11-28 1977-06-14 Honeywell Information Systems, Inc. Substrate bias voltage generated from refresh oscillator
US4049980A (en) * 1976-04-26 1977-09-20 Hewlett-Packard Company IGFET threshold voltage compensator
US4115710A (en) * 1976-12-27 1978-09-19 Texas Instruments Incorporated Substrate bias for MOS integrated circuit
US4124808A (en) * 1977-01-28 1978-11-07 National Semiconductor Corporation MOS on-chip voltage sense amplifier circuit
CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
US4142114A (en) * 1977-07-18 1979-02-27 Mostek Corporation Integrated circuit with threshold regulation
JPS54153565A (en) * 1978-05-24 1979-12-03 Nec Corp Semiconductor circuit using insulation gate type field effect transistor
US4276592A (en) * 1978-07-06 1981-06-30 Rca Corporation A-C Rectifier circuit for powering monolithic integrated circuits
US4223238A (en) * 1978-08-17 1980-09-16 Motorola, Inc. Integrated circuit substrate charge pump
US4260909A (en) * 1978-08-30 1981-04-07 Bell Telephone Laboratories, Incorporated Back gate bias voltage generator circuit
US4208595A (en) * 1978-10-24 1980-06-17 International Business Machines Corporation Substrate generator
JPS5559756A (en) 1978-10-30 1980-05-06 Fujitsu Ltd Semiconductor device
US4356412A (en) * 1979-03-05 1982-10-26 Motorola, Inc. Substrate bias regulator
JPS55124255A (en) * 1979-03-19 1980-09-25 Toshiba Corp Self-substrate bias circuit
JPS55162257A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor element having substrate bias generator circuit
JPS5619676A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor device
US4307307A (en) * 1979-08-09 1981-12-22 Parekh Rajesh H Bias control for transistor circuits incorporating substrate bias generators
US4262298A (en) * 1979-09-04 1981-04-14 Burroughs Corporation Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates
JPS6033314B2 (ja) * 1979-11-22 1985-08-02 富士通株式会社 基板バイアス電圧発生回路
US4539490A (en) * 1979-12-08 1985-09-03 Tokyo Shibaura Denki Kabushiki Kaisha Charge pump substrate bias with antiparasitic guard ring
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
DE3002894C2 (de) * 1980-01-28 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltung mit Transistoren
JPS56117390A (en) * 1980-02-16 1981-09-14 Fujitsu Ltd Semiconductor memory device
US4376898A (en) * 1980-02-29 1983-03-15 Data General Corporation Back bias regulator
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory
JPS57186351A (en) * 1981-05-12 1982-11-16 Fujitsu Ltd Semiconductor device
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
GB2126030A (en) * 1982-06-25 1984-03-14 Atari Inc Digital delay circuit with compensation for parameters effecting operational speed thereof
US4503465A (en) * 1982-11-24 1985-03-05 Rca Corporation Analog signal comparator using digital circuitry
US4553047A (en) * 1983-01-06 1985-11-12 International Business Machines Corporation Regulator for substrate voltage generator
JPS59162690A (ja) * 1983-03-04 1984-09-13 Nec Corp 擬似スタテイツクメモリ
JPS6052997A (ja) * 1983-09-02 1985-03-26 Toshiba Corp 半導体記憶装置
JPH07113863B2 (ja) * 1985-06-29 1995-12-06 株式会社東芝 半導体集積回路装置
JPS6394714A (ja) * 1986-10-09 1988-04-25 Toshiba Corp 制御パルス信号発生回路
DE3831176A1 (de) * 1988-09-13 1990-03-22 Siemens Ag Oszillatorzelle
US5377069A (en) * 1989-04-07 1994-12-27 Andreasson; Tomas Oscillating circuit for the elimination/reduction of static electricity
US5075572A (en) * 1990-05-18 1991-12-24 Texas Instruments Incorporated Detector and integrated circuit device including charge pump circuits for high load conditions
FR2674633B1 (fr) * 1991-03-28 1995-06-23 Sgs Thomson Microelectronics Circuit de detection d'un seuil haut d'une tension d'alimentation.
DE4337179A1 (de) * 1993-10-30 1995-05-04 Sel Alcatel Ag Spannungswandler, LCD-Anzeige mit Kontraststeuerung sowie Fernsprechendgerät
US5767733A (en) * 1996-09-20 1998-06-16 Integrated Device Technology, Inc. Biasing circuit for reducing body effect in a bi-directional field effect transistor
US6072209A (en) 1997-07-08 2000-06-06 Micro Technology, Inc. Four F2 folded bit line DRAM cell structure having buried bit and word lines
US5909618A (en) 1997-07-08 1999-06-01 Micron Technology, Inc. Method of making memory cell with vertical transistor and buried word and body lines
US6150687A (en) 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
US6191470B1 (en) 1997-07-08 2001-02-20 Micron Technology, Inc. Semiconductor-on-insulator memory cell with buried word and body lines
US5973356A (en) * 1997-07-08 1999-10-26 Micron Technology, Inc. Ultra high density flash memory
US5907170A (en) 1997-10-06 1999-05-25 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
US6066869A (en) 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
KR100278608B1 (ko) * 1998-01-16 2001-02-01 윤종용 문턱전압 보상회로
US6025225A (en) * 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US6304483B1 (en) 1998-02-24 2001-10-16 Micron Technology, Inc. Circuits and methods for a static random access memory using vertical transistors
US5963469A (en) 1998-02-24 1999-10-05 Micron Technology, Inc. Vertical bipolar read access for low voltage memory cell
US6097242A (en) * 1998-02-26 2000-08-01 Micron Technology, Inc. Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US5991225A (en) 1998-02-27 1999-11-23 Micron Technology, Inc. Programmable memory address decode array with vertical transistors
US6043527A (en) 1998-04-14 2000-03-28 Micron Technology, Inc. Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device
US6208164B1 (en) 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
JP2002064150A (ja) * 2000-06-05 2002-02-28 Mitsubishi Electric Corp 半導体装置
US9287253B2 (en) 2011-11-04 2016-03-15 Synopsys, Inc. Method and apparatus for floating or applying voltage to a well of an integrated circuit
EP2884663B1 (en) * 2013-12-13 2017-02-22 IMEC vzw Restoring OFF-state stress degradation of threshold voltage

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609414A (en) * 1968-08-20 1971-09-28 Ibm Apparatus for stabilizing field effect transistor thresholds
US3577166A (en) * 1968-09-17 1971-05-04 Rca Corp C-mos dynamic binary counter
US3604952A (en) * 1970-02-12 1971-09-14 Honeywell Inc Tri-level voltage generator circuit
US3643253A (en) * 1970-02-16 1972-02-15 Gte Laboratories Inc All-fet digital-to-analog converter
US3638047A (en) * 1970-07-07 1972-01-25 Gen Instrument Corp Delay and controlled pulse-generating circuit
US3673438A (en) * 1970-12-21 1972-06-27 Burroughs Corp Mos integrated circuit driver system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158851A (en) * 1978-06-06 1979-12-15 Nec Corp Field effect transistor circuit
JPS5529198A (en) * 1978-08-23 1980-03-01 Rockwell International Corp Substrate bias generator circuit
JPS5683057A (en) * 1979-12-11 1981-07-07 Nec Corp Integrated circuit

Also Published As

Publication number Publication date
US3806741A (en) 1974-04-23
GB1381435A (en) 1975-01-22
DE2308819A1 (de) 1973-11-29
JPS5346428B2 (en]) 1978-12-13
NL7306762A (en]) 1973-11-20
FR2184650A1 (en]) 1973-12-28
IL41518A0 (en) 1973-04-30
IT983294B (it) 1974-10-31

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